Interface effects on the photoluminescence of GaAs/GaInP quantum wells

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 1, 1998, Pages 15-22

  Vanelle, Eric ^a   Mesrine, Magali ^a   Grandjean, Nicolas ^a   Deparis, Christiane ^a   Massies, Jean ^a  

^a CRHEA CNRS   (France)

Author keywords

As P exchange; CBE; GaInP GaAs; Indium surface segregation; Interfaces; Photoluminescence

Indexed keywords

CHEMICAL BEAM EPITAXY; HETEROJUNCTIONS; INTERFACES (MATERIALS); PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

PHOTOLUMINESCENCE SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031675891     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.37.15     Document Type: Article

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