Indium surface segregation during chemical beam epitaxy of Ga1-xInxAs/GaAs and Ga1-xInxP/GaAs heterostructures

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 1242-1246

  Mesrine, M ^a   Massies, J ^a   Deparis, C ^a   Grandjean, N ^a   Vanelle, E ^a   Leroux, M ^a  

^a CRHEA CNRS   (France)

Author keywords

Chemical beam epitaxy; Ga1 xInxP; InxGa1 xAs; Photoluminescence; Surface segregation

Indexed keywords

CHEMICAL BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SURFACE STRUCTURE; THERMAL EFFECTS;

SURFACE SEGREGATION;

HETEROJUNCTIONS;

EID: 0031146257     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00919-0     Document Type: Article

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