Band alignments in GalnP/GaP/GaAs/GaP/GalnP quantum wells

Applied Physics Letters

Volumn 71, Issue 8, 1997, Pages 1110-1112

  Kwok, S H ^a,b   Yu, P Y ^a,b   Uchida, K ^c   Arai, T ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c TAIYO NIPPON SANSO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041385058     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119742     Document Type: Article

References (19)

1. F. Omnes and M. Razeghi. Appl. Phys. Lett. 59, 1034 (1991).
2. T. Suzuki, A. Gomyo, S. Iijima, K. Kobayashi, S. Kawata, I. Hino, and T. Yuasa, Jpn. J. Appl. Phys. 1 27, 2098 (1988).
3. F. E. Guimaraes, B. Elsner, R. Westphalen, B. Spangenberg, H. J. Geelen, P. Balk, and K. Heime, J. Cryst. Growth 124, 199 (1992).
4. R. Bhat, M. A. Kozn, M. J. S. P. Brasil, R. E. Nahory, C. J. Palmstrom, and B. J. Wilkene, J. Cryst. Growth 124, 576 (1992).
5. C. Y. Tsai, M. Moser, C. Geng, V. Harle, T. Forner, P. Michler, A. Hangleiter, and F. Scholz, J. Cryst. Growth 145, 786 (1994).
6. Q. Liu, S. Derksen, A. Lindner, F. Schefter, W. Prost, and F.-J. Tegude, J. Appl. Phys. 77, 1154 (1995).
7. K. Uchida, T. Arai, and K. Matsumoto, J. Appl. Phys. 81, 771 (1997).
8. U. Venkateswaren, M. Chandrasekar, H. R. Chandrasekar, B. A. Vojak, F. A. Chambers, and J. M. Meese, Phys. Rev. B 33, 8416 (1986).
9. D. J. Wolford, T. K. Keuch, J. A. Bradley, M. A. Gell, D. Dinno, and M. Jaros, J. Vac. Sci. Technol. B 4, 1043 (1986).
10. J. Chen, J. R. Sites, I. L. Spain, M. J. Hafich, and G. Y. Robinson, Appl. Phys. Lett. 58, 744 (1991).
11. M. Leroux, M. L. Fille, B. Gil, J. P. Landesman, and J. C. Garcia, Phys. Rev. B 47, 6465 (1993).
12. M. F. Whitaker, D. J. Dunstan, M. Missous, and L. Gonzalez, Phys. Status Solidi B 198, 349 (1996).
13. K. Uchida, P. Y. Yu, N. Noto, and E. R. Weber, Appl. Phys. Lett. 64, 2858 (1994).
14. z minimum is small.
15. c) transition is not observed in our studies because the holes generated in GaInP are trapped by the GaAs well.
16. Landoldt-Börnstein Tables, Semiconductors: Physics of Group IV Elements and III-V Compounds, edited by O. Madelung (Springer, Berlin, 1986).
17. C. G. Van de Walle, Phys. Rev. B 39, 1871 (1989).
18. S. Froyen, A. Zunger, and A. Mascarenhas, Appl. Phys. Lett. 68, 2852 (1996).
19. S. H. Kwok, P. Y. Yu, K. Uchida, and T. Arai, J. Appl. Phys. (to be published).