SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 336, Issue 1-2, 1998, Pages 358-361

Photoluminescence studies of As-P exchange in GaAs/GaInP2 quantum wells grown by chemical beam epitaxy

(7) Aurand, A a Leymarie, J a Vasson, A a Vasson, A M a Mesrine, M b Deparis, C b Leroux, M b

a LASMEA (France)

b CRHEA CNRS (France)

Author keywords

As P exchange; Chemical beam epitaxy; GaAs GaInP2 quantum wells; Photoluminescence

Indexed keywords

ARSENIC COMPOUNDS; CHEMICAL BEAM EPITAXY; EXCITONS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

GALLIUM INDIUM PHOSPHIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0345831913 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)01287-5 Document Type: Article

Times cited : (3)

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