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Journal of Crystal Growth

Volumn 186, Issue 1-2, 1998, Pages 48-54

Determination of composition distributions in InP/InGaAs/InP quantum-well structures by X-ray crystal truncation rod scattering and quantum levels

(8) Tabuchi, M a Fujibayashi, K a Yamada, N a Hagiwara, K a Kobashi, A a Iguchi, T a Takeda, Y a Kamei, H b

a NAGOYA UNIVERSITY (Japan)

b SUMITOMO ELECTRIC INDUSTRIES LTD (Japan)

Author keywords

Calculation of energy level; Heterointerface; InGaAs InP; Photoluminescence; X ray CTR

Indexed keywords

ELECTRON ENERGY LEVELS; HETEROJUNCTIONS; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

X RAY CRYSTAL TRUNCATION ROD SCATTERING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032024770 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00476-4 Document Type: Article

Times cited : (17)

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