Computational chemistry study on crystal growth of InGaN/GaN

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2991-2995

  Inaba, Yusaku ^a   Onozu, Takayuki ^a   Takami, Seiichi ^a   Kubo, Momoji ^a   Miyamoto, Akira ^a   Imamura, Akira ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b HIROSHIMA KOKUSAI GAKUIN UNIVERSITY   (Japan)

Author keywords

Crystal growth; InGaN; Periodic density functional theory calculations; Tight binding quantum chemical molecular dynamics calculations

Indexed keywords

BOUNDARY CONDITIONS; CRYSTAL GROWTH; MOLECULAR DYNAMICS; PROBABILITY DENSITY FUNCTION; QUANTUM THEORY; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING INDIUM COMPOUNDS; THIN FILMS;

DENSITY FUNCTIONAL THEORY (DFT) CALCULATIONS; POLARITY SURFACES;

GALLIUM NITRIDE;

EID: 0035300754     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2991     Document Type: Article

References (28)