High concentration n-type doping in Si layers epitaxially grown by ultra-high vacuum chemical vapor deposition with cracking heater

Journal of Crystal Growth

Volumn 172, Issue 3-4, 1997, Pages 376-380

  Sugiyama, Naoharu ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIVES; CHEMICAL VAPOR DEPOSITION; COMPOSITION; EPITAXIAL GROWTH; MOLECULAR DYNAMICS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; VACUUM APPLICATIONS;

DOPING CONCENTRATION; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING SILICON;

EID: 0031103190     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00748-8     Document Type: Article

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