C-V, DLTS and conductance transient characterization of SiNx: H/InP interface improved by N2 remote plasma cleaning of the InP surface

Journal of Materials Science: Materials in Electronics

Volumn 12, Issue 4-6, 2001, Pages 263-267

  Castan H ^a   Duenas S ^a   Barbolla, J ^a   Redondo, E ^b   Martil I ^b   Gonzalez Diaz G ^b  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC PROPERTIES; ELECTRON CYCLOTRON RESONANCE; INTERFACES (MATERIALS); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM PHOSPHIDE; SPECTROSCOPIC ANALYSIS;

CONDUCTANCE TRANSIENT TECHNIQUES; DISORDER INDUCED GAP STATES; PLASMA CLEANING;

SILICON NITRIDE;

EID: 0035299896     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1011219622378     Document Type: Article

References (13)