Monte Carlo study of sub-0.1 μm Si0.97C0.03/Si MODFET: electron transport and device performance

IEEE Transactions on Electron Devices

Volumn 47, Issue 6, 2000, Pages 1247-1250

  Dollfus, Philippe ^a   Galdin, Sylvie ^a   Hesto, Patrice ^b   Velazquez, Jesus Enrique ^b  

^a CNRS   (France)

^b UNIVERSITY OF SALAMANCA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; HOT CARRIERS; MONTE CARLO METHODS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES;

BRILLOUIN ZONE EDGES; NONSTATIONARY TRANSPORT;

FIELD EFFECT TRANSISTORS;

EID: 0033731781     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.842969     Document Type: Article

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