Growth of in situ CoSi2 layer by metalorganic chemical vapor deposition on Si tips and its field-emission properties

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 2, 2001, Pages 533-536

  Han, Byung Wook ^a   Rhee, Hwa Sung ^a   Ahn, Byung Tae ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH (MATERIALS); INORGANIC COATINGS; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON;

COBALT SILICON LAYER; FIELD EMISSION PROPERTY; FOWLER-NORDHEIM PLOT;

COBALT COMPOUNDS;

EID: 0035273350     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1354977     Document Type: Article

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