Control of emission characteristics of silicon field emitter arrays by an ion implantation technique

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 1885-1888

  Kanemaru, Seigo ^a   Hirano, Takayuki ^a,b   Tanoue, Hisao ^a   Itoh, Junji ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b KOBE STEEL LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000244077     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588572     Document Type: Article

References (11)

1. R. Stratton, Proc. Phys. Soc. (London) Ser. B 68, 746 (1955).
2. D. K. Schroder, R. N. Thomas, J. Vine, and H. C. Nathanson, IEEE Trans. Electron Devices ED-21, 785 (1974).
3. Y. Ohbuchi, T. Tamon, and T. Asano, in Extended Abstracts, 53rd Autumn Meeting, 1992, The Japan Society of Applied Physics, 19p-ZM-1, p. 555 (in Japanese).
4. E. C. Boswell and P. R. Wilshaw, J. Vac. Sci. Technol. B 11, 412 (1993).
5. K. Sawada, K. Ji, and T. Ando, Jpn. J. Appl. Phys. 33, L1345 (1994).
6. S. H. Jo, S. J. Known, J. D. Lee, and H. S. Park, in Extended Abstracts of the 7th International Vacuum Microelectronics Conference, Grenoble, 1994, p. 120.
7. T. Hirano, Y. Nazuka, S. Kanemaru, and J. Itoh, in Extended Abstracts, 42nd Spring Meeting, 1995, The Japan Society of Applied Physics and Related Societies, 30p-T-13, p. 643 (in Japanese).
8. S. Kanemaru, T. Hirano, H. Tanoue, and J. Itoh, ETL Technical Report, Report. No. TR-95-20.
9. K. Betsui, in Technical Digest of 4th IVMC, Nagahama, Japan, 1991, p. 26.
10. J. R. Arthur, Jr., J. Appl. Phys. 36, 3221 (1965).
11. T. Hirano, S. Kanemaru, H. Tanoue, and J. Itoh, Jpn. J. Appl. Phys. 34, 6907 (1995).