-
3
-
-
0027647341
-
A practical high-latchup immunity design methodology for internal circuits in the standard cell-based CMOS/BiCMOS LSI's
-
T. AokiA practical high-latchup immunity design methodology for internal circuits in the standard cell-based CMOS/BiCMOS LSI's IEEE Trans. Electron Devices, vol. 40, pp. 1432-1436, Aug. 1993.
-
IEEE Trans. Electron Devices, Vol. 40, Pp. 1432-1436, Aug. 1993.
-
-
Aoki, T.1
-
4
-
-
0027702156
-
A discussion on the temperature dependence of latch-up trigger current in CMOS/BiCMOS sturctures
-
_A discussion on the temperature dependence of latch-up trigger current in CMOS/BiCMOS sturctures IEEE Trans. Electron Devices, vol. 40, pp. 2023-2028, Nov. 1993.
-
IEEE Trans. Electron Devices, Vol. 40, Pp. 2023-2028, Nov. 1993.
-
-
-
9
-
-
0025588530
-
A nonideal macromodel of thyristor for transient analysis in power electronic systems
-
F. J. Gracia, F. Aritzti, and F. J. ArancetaA nonideal macromodel of thyristor for transient analysis in power electronic systems IEEE Trans. Ind. Electron., vol. 37, no. 6, Dec. 1990.
-
IEEE Trans. Ind. Electron., Vol. 37, No. 6, Dec. 1990.
-
-
Gracia, F.J.1
Aritzti, F.2
Aranceta, F.J.3
-
11
-
-
0029191734
-
A physics-based GTO model for circuit simulation
-
C. L. Ma, P. O. Lauritzen, and J. SiggA physics-based GTO model for circuit simulation in Proc. IEEE Power Electronics Specialists Conf., vol. 2, 1995, pp. 872-878.
-
In Proc. IEEE Power Electronics Specialists Conf., Vol. 2, 1995, Pp. 872-878.
-
-
Ma, C.L.1
Lauritzen, P.O.2
Sigg, J.3
-
12
-
-
33749874959
-
Considering electrothermal interactions in sub-micron n-MOS transistors on microscopic scale within a 3D particle dynamics based Monte Carlio simulator
-
A. Poppe, Gy. Csaba, K. Tarnay, and V. SzekelyConsidering electrothermal interactions in sub-micron n-MOS transistors on microscopic scale within a 3D particle dynamics based Monte Carlio simulator in Proc. 5th Thermionic Workshop, Rome, Italy, Oct. 3-6, 1999, pp. 134-137.
-
In Proc. 5th Thermionic Workshop, Rome, Italy, Oct. 3-6, 1999, Pp. 134-137.
-
-
Poppe, A.1
Csaba, G.2
Tarnay, K.3
Szekely, V.4
-
15
-
-
0023361269
-
The extraction of terminal charges from two-dimensional device simulations of MOS transistors
-
E. J. Prendergast, P. Lloyd, and H. DirksThe extraction of terminal charges from two-dimensional device simulations of MOS transistors Int. J. Comput. Math. Elect. Electron. Eng., vol. 6, pp. 107-114, 1987.
-
Int. J. Comput. Math. Elect. Electron. Eng., Vol. 6, Pp. 107-114, 1987.
-
-
Prendergast, E.J.1
Lloyd, P.2
Dirks, H.3
-
16
-
-
0024646298
-
Extracting transistor charges from device simulations by gradient fitting
-
W. M. Coughran, W. Fichtner, and E. GrosseExtracting transistor charges from device simulations by gradient fitting IEEE Trans Computer-Aided Design Integr. Circuits Syst., vol. 8, pp. 380-394, Apr. 1989.
-
IEEE Trans Computer-Aided Design Integr. Circuits Syst., Vol. 8, Pp. 380-394, Apr. 1989.
-
-
Coughran, W.M.1
Fichtner, W.2
Grosse, E.3
-
17
-
-
0027684654
-
A universal large/small signal 3-terminal FET model using a nonquasistatic charge-based approach
-
R. R. Daniels, A. T. Yang, and J. P. HarrangA universal large/small signal 3-terminal FET model using a nonquasistatic charge-based approach IEEE Trans. Electron Devices, vol. 40, pp. 1723-1729, Oct. 1993.
-
IEEE Trans. Electron Devices, Vol. 40, Pp. 1723-1729, Oct. 1993.
-
-
Daniels, R.R.1
Yang, A.T.2
Harrang, J.P.3
-
18
-
-
0026205936
-
Improved small-signal equivalent circuit model and large-signal state-equations for the MOSFET/MODFET wave equation
-
P. Roblin, S. C. Kang, and W. R. LiouImproved small-signal equivalent circuit model and large-signal state-equations for the MOSFET/MODFET wave equation IEEE Trans. Electron Devices, vol. 38, pp. 1706-1718, Aug. 1991.
-
IEEE Trans. Electron Devices, Vol. 38, Pp. 1706-1718, Aug. 1991.
-
-
Roblin, P.1
Kang, S.C.2
Liou, W.R.3
-
19
-
-
33749962714
-
-
A. T. Yang, MISIM Version-2.3 User Manual. Seattle, WA: Dept. Elect. Eng., Univ. Washington, Mar. 29, 1993.
-
MISIM Version-2.3 User Manual. Seattle, WA: Dept. Elect. Eng., Univ. Washington, Mar. 29, 1993.
-
-
Yang, A.T.1
-
20
-
-
0028377202
-
An efficient nonquasistatic diode model for circuit simulation
-
A. T. Yang, Y. Liu, and J. T. YaoAn efficient nonquasistatic diode model for circuit simulation IEEE Trans. Comput.-Aided Design, vol. 13, pp. 231-239, Feb. 1994.
-
IEEE Trans. Comput.-Aided Design, Vol. 13, Pp. 231-239, Feb. 1994.
-
-
Yang, A.T.1
Liu, Y.2
Yao, J.T.3
-
22
-
-
33749880485
-
-
F. E. Gentry, F. W. Gutzwiller, N. Holonyak Jr., and E. E. Von Zastrow, Semiconductor Controlled Rectifiers: Principles and Applications ofp-n-p-n Devices. Englewood Cliffs, NJ: Prentice-Hall, 1964, p. 65.
-
Semiconductor Controlled Rectifiers: Principles and Applications Ofp-n-p-n Devices. Englewood Cliffs, NJ: Prentice-Hall, 1964, P. 65.
-
-
Gentry, F.E.1
Gutzwiller, F.W.2
Holonyak Jr., N.3
Von Zastrow, E.E.4
-
24
-
-
33749876077
-
Logi-thermal simulation: A new approach for considering thermal effects in digital designs
-
G. Hajas et al., Logi-thermal simulation: A new approach for considering thermal effects in digital designs in Proc. IEEE Int. Workshop on Design, Test and Applications, Dubrovnik, Croatia, June 8-10, 1998, pp. 89-92.
-
In Proc. IEEE Int. Workshop on Design, Test and Applications, Dubrovnik, Croatia, June 8-10, 1998, Pp. 89-92.
-
-
Hajas, G.1
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