A Universal Large/Small Signal 3-Terminal FET Model Using a Nonquasi-Static Charge-Based Approach

IEEE Transactions on Electron Devices

Volumn 40, Issue 10, 1993, Pages 1723-1729

  Yang, Andrew T ^b   Harrang, Jeff P ^a  

^a BOEING COMPANY   (United States)

^b UNIVERSITY OF WASHINGTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; ELECTRIC NETWORK PARAMETERS; ELECTRIC NETWORK TOPOLOGY; FREQUENCY DOMAIN ANALYSIS; LEAST SQUARES APPROXIMATIONS; MISFET DEVICES; PARAMETER ESTIMATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

DEVICE SIMULATORS; NONQUASI-STATIC CHARGE BASED APPROACH;

FIELD EFFECT TRANSISTORS;

EID: 0027684654     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.277326     Document Type: Article

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