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Volumn 6, Issue 2, 1987, Pages 107-114
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The extraction of terminal charges from two-dimensional device simulations of mos transistors
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Author keywords
[No Author keywords available]
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Indexed keywords
TRANSISTORS - PERFORMANCE;
MOS TRANSISTORS;
TERMINAL CHARGES;
TRANSIENT PERFORMANCE;
SEMICONDUCTOR DEVICES, MOS;
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EID: 0023361269
PISSN: 03321649
EISSN: None
Source Type: Journal
DOI: 10.1108/eb010309 Document Type: Review |
Times cited : (6)
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References (10)
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