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Volumn 13, Issue 2, 1994, Pages 231-239

An Efficient Nonquasi-Static Diode Model for Circuit Simulation

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CHARGE CARRIERS; CIRCUIT THEORY; COMPUTER SIMULATION; ELECTRIC NETWORK ANALYSIS; LUMPED PARAMETER NETWORKS; RELIABILITY; SEMICONDUCTOR DEVICE MODELS;

EID: 0028377202     PISSN: 02780070     EISSN: 19374151     Source Type: Journal    
DOI: 10.1109/43.259946     Document Type: Article
Times cited : (21)

References (23)
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  • 12
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    • P. Robin, S. C. Kang, and W. R. Liou, “Improved small-signal equivalent circuit model and large-signal state equations for the MOS-FET/MODFET FET/MODFET wave equation,” IEEE Trans. Electron Devices, vol. 38, pp. 1706–1718, 1991.
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    • (1993) IEEE Trans. Electron Devices , vol.40
    • Daniels, R.R.1    Yang, A.T.2    Harrang, J.P.3
  • 15
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    • Determination of carrier lifetime from rectifier ramp recovery waveform
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.