Experimental Analysis of Velocity Overshoot Degradation in Sub-0.1 μm Fully-Depleted SOI-MOSFETs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1543-1547

  Ohba, Ryuji ^a   Mizuno, Tomohisa ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Anomalous scattering; Gate to source capacitance; Low power application; MOSFET; Non stationary transport; Self heating; SOI; Transconductance; Velocity overshoot; Vertical field

Indexed keywords

EID: 0005398924     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1543     Document Type: Article

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