Experimental study of nonstationary electron transport in sub-0.1 μm metal-oxide-silicon devices: Velocity overshoot and its degradation mechanism

Journal of Applied Physics

Volumn 82, Issue 10, 1997, Pages 5235-5240

  Mizuno, Tomohisa ^a   Ohba, Ryuji ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BULK STRUCTURE; CURRENT CAPABILITY; DEGRADATION MECHANISM; ELECTRON TRANSPORT; ELECTRON VELOCITY; ELECTRON VELOCITY OVERSHOOT; EXPERIMENTAL STUDIES; GATE DRIVES; IMPURITY CONCENTRATION; INVERSION LAYER; LOW CARRIER DENSITY; LOW FIELD MOBILITY; METAL-OXIDE; MOS STRUCTURE; NON-STATIONARY TRANSPORTS; NONSTATIONARY; PHYSICAL LIMITATIONS; SILICON DEVICES; SILICON-ON-INSULATORS; SOI DEVICES; SURFACE ELECTRON DENSITY; TRANSVERSE ELECTRIC FIELD; TRANSVERSE FIELD; VELOCITY OVERSHOOT;

CARRIER CONCENTRATION; DEGRADATION; ELECTRIC FIELDS; ELECTRON DENSITY MEASUREMENT; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; IMPURITIES; SEMICONDUCTING SILICON; VELOCITY;

ELECTRONS;

EID: 0000961949     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366389     Document Type: Article

References (12)

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