Saturation capacitance of thin oxide MOS structures and the effective surface density of states of silicon

Solid State Electronics

Volumn 17, Issue 4, 1974, Pages 335-339

  Maserjian, J ^a   Petersson, G ^a   Svensson, C ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON;

EID: 0016049211     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(74)90125-7     Document Type: Article

References (8)

1. Polishing of silicon by the cupric ion process
2. Quantum mechanical calculation of the carrier distribution and the thickness of the inversion layer of a MOS field-effect transistor