Growth and properties of (Ga, Mn) As: A new III-V diluted magnetic semiconductor

Applied Surface Science

Volumn 113-114, Issue , 1997, Pages 178-182

  Matsukura, F ^a   Oiwa, A ^b   Shen, A ^a   Sugawara, Y ^a   Akiba, N ^a   Kuroiwa, T ^a   Ohno, H ^a   Endo, A ^b   Katsumoto, S ^b   Iye, Y ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Anomalous Hall effect; Diluted magnetic semiconductors; Ferromagnetic order; III V compounds; Magnetic anisotropy; Molecular beam epitaxy

Indexed keywords

COMPOSITION EFFECTS; HALL EFFECT; LATTICE CONSTANTS; LOW TEMPERATURE OPERATIONS; MAGNETIC PROPERTIES; MAGNETIC VARIABLES MEASUREMENT; MAGNETIZATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING MANGANESE COMPOUNDS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

ANOMALOUS HALL EFFECT; DILUTED MAGNETIC SEMICONDUCTORS; FERROMAGNETIC ORDER; MANGANESE ARSENIDE;

SEMICONDUCTOR GROWTH;

EID: 0031547322     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00790-8     Document Type: Article

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