Formation of stacked self-assembled InAs quantum dots in GaAs matrix for laser applications

Materials Research Society Symposium - Proceedings

Volumn 417, Issue , 1996, Pages 141-146

  Ustinov, V M ^a   Egorov, A Yu ^a   Zhukov, A E ^a   Ledentsov, N N ^a   Maksimov, M V ^a   Tsatsul'nikov, A F ^a   Bert, N A ^a   Kosogov, A O ^a   Kop'ev, P S ^a   Bimberg, D ^a   Alferov, Zh I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DEPOSITION; ELECTRON ENERGY LEVELS; EMISSION SPECTROSCOPY; LASER APPLICATIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SYNTHESIS (CHEMICAL); THERMODYNAMIC STABILITY;

CARRIER LOCALIZATION ENERGY; GROUND STATE TRANSITION; THRESHOLD CURRENT DENSITY; VERTICALLY COUPLED INDIUM ARSENIDE QUANTUM DOT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0029707055     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)