Reduced critical thickness and photoluminescence line splitting in multiple layers of self-assembled Ge/Si islands

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 74, Issue 1, 2000, Pages 248-252

  Schmidt, O G ^a   Eberl, K ^a   Kienzle, O ^b   Ernst, F ^b   Christiansen, S ^c   Strunk, H P ^c  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION SPECTROSCOPY; MULTILAYERS; NUCLEATION; PHOTOLUMINESCENCE; SEMICONDUCTING GERMANIUM; SILICON WAFERS; STRAIN; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ISLAND LAYERS;

SEMICONDUCTING FILMS;

EID: 0033730587     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00570-X     Document Type: Article

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