Suicide application on gated single-crystal, poly cry stalline and amorphous silicon FEAs-part II: Co suicide

IEEE Transactions on Electron Devices

Volumn 48, Issue 1, 2001, Pages 155-160

  Shim, Byung Chang ^a,b   Park, Byung Gook ^a,b  

^a IEEE   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

Co ti bi layers; Cobalt suicide; Field emitter arrays; Ti co bi layers

Indexed keywords

COBALT SILICIDE; FAILURE VOLTAGE; SILICON FIELD EMITTER ARRAYS;

AMORPHOUS SILICON; COBALT; ELECTRIC POTENTIAL; ELECTRON EMISSION; LEAKAGE CURRENTS; POLYCRYSTALLINE MATERIALS; RAPID THERMAL ANNEALING; SILICON COMPOUNDS; SINGLE CRYSTALS; TITANIUM;

ELECTRON DEVICES;

EID: 0035128019     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.892183     Document Type: Article

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