High current density Si field emission devices with plasma passivation and HfC coating

IEEE Transactions on Electron Devices

Volumn 46, Issue 4, 1999, Pages 792-797

  Rakhshandehroo, Mohammad R ^a   Pang, Stella W ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRON DEVICE MANUFACTURE; ELECTRON EMISSION; HAFNIUM COMPOUNDS; HYDROGEN; MOLYBDENUM COMPOUNDS; PASSIVATION; PLASMAS; SEMICONDUCTING SILICON; STABILITY; VACUUM TECHNOLOGY;

HIGH CURRENT DENSITY SILICON FIELD EMISSION DEVICES; INDUCTIVELY COUPLED PLASMA; PLASMA PASSIVATION; VACUUM MICROELECTRONICS;

ELECTRON DEVICES;

EID: 0032650121     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.753716     Document Type: Article

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