Ultrathin cobalt silicide layers formed by rapid thermal processing of metal on amorphous silicon

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 4, 1997, Pages 899-902

  Kamal, A H M ^a   Rack, M J ^a   Kozicki, M N ^a   Ferry, D K ^a   Lutzen J ^a   Hallmark, J A ^b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040218288     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589505     Document Type: Article

References (14)

1. C. Y. Ting, Tech. Dig. Int. Electron Devices Meet. 84, 110 (1984).
2. S. P. Murarka, J. Vac. Sci. Technol. B 4, 1325 (1986).
3. S. P. Murarka, J. Vac. Sci. Technol. 17, 775 (1980).
4. W. J. Freitas and J. W. Swart, J. Electrochem. Soc. 138, 3067 (1991).
5. A. E. Morgan, E. K. Broadbent, M. Delfino, B. Coulman, and D. K. Sanda, J. Electrochem. Soc. 134, 925 (1987).
6. S. S. Lau, J. W. Mayer, and K. N. Tu, J. Appl. Phys. 49, 4005 (1978).
7. K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai, and K. Seki, IEEE Trans. Electron Devices 41, 1628 (1994).
8. K. H. Robrock, K. N. Tu, D. W. Abraham, and J. B. Clabes, Appl. Phys. Lett. 54, 1543 (1989).
9. W. M. Chen, J. Lin, S. K. Banarjee, and J. C. Lee, J. Appl. Phys. 73, 4712 (1993).
10. Fann-Mei Yang and Mao-Chieh Chen, Thin Solid Films 207, 75 (1992).
11. D. C. Montgomery, Design and Analysis of Experiments (Wiley, New York, 1991), Chaps. 7-10.
12. J. Chevallier and A. N. Larsen, Appl. Phys. A 39, 141 (1986).
13. Y. S. Lou, C. Y. Wu, and H. C. Cheng, Solid-State Electron. 36, 75 (1993).
14. A. H. M. Kamal, Ph.D. thesis, Arizona State University (1997).