A Novel Fabrication Process of a Silicon Field Emitter Array with Thermal Oxide as a Gate Insulator

IEEE Electron Device Letters

Volumn 16, Issue 11, 1995, Pages 488-490

  Uh, Hyung Soo ^a   Lee, Jong Duk ^a   Kwon, Sang Jik ^b  

^a Seoul National University   (South Korea)

^b Gachon University College of Medicine   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC INSULATORS; GATES (TRANSISTOR); LEAKAGE CURRENTS; OXIDATION; OXIDES; PERFORMANCE; PROCESS CONTROL; SEMICONDUCTING SILICON;

ANODE CURRENT; GATE INSULATOR; HIGH ETCH RATE; PROCESS STABILITY; SILICON FIELD EMITTER ARRAY; THERMAL OXIDE; TURN ON VOLTAGE;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0029403830     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.468276     Document Type: Article

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