Study of Si(1 0 0) surfaces etched in TMAH solution

Sensors and Actuators, A: Physical

Volumn 88, Issue 1, 2001, Pages 71-78

  Sakaino, Kaoru ^a   Adachi, Sadao ^a  

^a GUNMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; ELLIPSOMETRY; ETCHING; MONOLAYERS; SPECTROSCOPIC ANALYSIS; SURFACE ROUGHNESS;

DIELECTRIC FUNCTIONS; TETRAMETHYLAMMONIUM HYDROXIDE (TMAH) SOLUTION;

SEMICONDUCTING SILICON;

EID: 0035125196     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(00)00501-X     Document Type: Article

References (37)

1. Petersen K.E. Silicon as a mechanical material. Proc. IEEE. 70:1982;420-457.
2. S.A. Campbell, H.J. Lewerenz (Eds.), Semiconductor Micromachining, Vol. 2, Wiley, Chichester, UK, 1998.
3. Palik E.D., Bermudez V.M., Glembocki O.J. Ellipsometric study of orientation-dependent etching of silicon in aqueous KOH. J. Electrochem. Soc. 132:1985;871-884.
4. Seidel H., Csepregi L., Heuberger A., Baumgärtel H. Anisotropic etching of crystalline silicon in alkaline solutions. J. Electrochem. Soc. 137:1990;3612-3632.
5. Palik E.D., Glembocki O.J., Heard I. Jr., Burno P.S., Tenerz L. Etching roughness for (1 0 0) silicon surfaces in aqueous KOH. J. Appl. Phys. 70:1991;3291-3300.
6. Adachi S., Ikegami T., Utani K. Spectroscopic ellipsometry study of (1 1 1) and (1 0 0) Si surfaces etched in aqueous KOH solution. Jpn. J. Appl. Phys. 32:1993;4398-4403.
7. Zavracky P.M., Earles T., Pokrovskiy N.L., Green J.A., Burns B.E. Fabrication of vertical sidewalls by anisotropic etching of silicon (1 0 0) wafers. J. Electrochem. Soc. 141:1994;3182-3188.
8. Vu Q.-B., Stricker D.A., Zavracky P.M. Surface characteristics of (1 0 0) silicon anisotropically etched in aqueous KOH. J. Electrochem. Soc. 143:1996;1372-1375.
9. Bressers P.M.M.C., Kelly J.J., Gardeniers J.G.E., Elwenspoek M. Surface morphology of p-type (1 0 0) silicon etched in aqueous alkaline solution. J. Electrochem. Soc. 143:1996;1744-1750.
10. Zubel I., Barycka I. Silicon anisotropic etching in alkaline solutions I. The geometric description of figures developed under etching Si(1 0 0) in various solutions. Sens. Actuators A. 70:1998;250-259.
11. Zubel I. Silicon anisotropic etching in alkaline solutions II. On the influence of anisotropy on the smoothness of etched surfaces. Sens. Actuators A. 70:1998;260-268.
12. Sato K., Shikida M., Yamashiro T., Tsunekawa M., Ito S. Roughening of single-crystal silicon surface etched by KOH water. Sens. Actuators A. 73:1999;122-130.
13. Lee D.B. Anisotropic etching of silicon. J. Appl. Phys. 40:1969;4569-4574.
14. Finne R.M., Klein D.L. A water-amine-complexing agent system for etching silicon. J. Electrochem. Soc. 114:1967;965-970.
15. Declereq M.J., Gerzberg L., Meindl J.D. Optimization of the hydrazine-water solution for anisotropic etching of silicon in integrated circuit technology. J. Electrochem. Soc. 122:1975;545-552.
16. Reisman A., Berkenbilt M., Chan S.A., Kaufman F.B., Green D.C. The controlled etching of silicon in catalysed ethylenediamine-pyrocatechol-water solutions. J. Electrochem. Soc. 126:1979;1406-1415.
17. Wu X., Ko W.H. Compensating corner undercutting in anisotropic etching of (1 0 0) silicon. Sens. Actuators A. 18:1989;207-215.
18. Bhatnagar Y.K., Nathan A. On pyramidal protrusions in anisotropic etching of. 〈100〉 silicon Sens. Actuators A. 36:1993;233-240.
19. U. Schnakenberg, W. Benecke, P. Lange, TMAH etchants for silicon micromachining, in: Proceeding of the 6th Internaional Conference, on Solid-State Sens. Actuators, San Francisco, CA, USA, 1991, Tech. Digest, 815-818.
20. Tabata O., Asahi R., Funabashi H., Shimaoka K., Sugiyama S. Anisotropic etching of silicon in TMAH solutions. Sens. Actuators A. 34:1992;51-57.
21. Zavracky P.M. Comparative studies of TMAH and KOH for anisotropic etching of silicon. Electrochem. Soc. Proc. 97(5):1997;102-117.
22. Thong J.T.L., Choi W.K., Chong C.W. TMAH etching of silicon and the interaction of etching parameters. Sens. Actuators A. 63:1997;243-249.
23. Choi W.K., Thong J.T.L., Luo P., Tan C.M., Chua T.H., Bai Y. Characterisation of pyramid formation arising from the TMAH etching of silicon. Sens. Actuators A. 71:1998;238-243.
24. Sato K., Shikada M., Yamashiro T., Asaumi K., Iriye Y., Yamamoto M. Anisotropic etching rates of single-crystal silicon for TMAH water solution as a function of crystallographic orientation. Sens. Actuators A. 73:1999;131-137.
25. Charbonnieras A.R., Tellier C.R. Characterization of the anisotropic chemical attack of {h k 0} silicon plates in a TMAH solution: determination of a database. Sens. Actuators A. 77:1999;81-97.
26. Choi W.K., Thong J.T.L., Luo P., Bai Y., Tan C.M., Chua T.H. Formation of pyramids at surface of TMAH etched silicon. Appl. Surf. Sci. 144-145:1999;472-475.
27. M. Sekimura, Anisotropic etching of surfactant-added TMAH solution, in: Proceedings of MEMS'99 (IEEE), OR, USA, 21 January 1999, pp. 650-655.
28. Smith T. Ellipsometry for measurements at and below monolayer coverage. J. Opt. Soc. Am. 58:1968;1069-1079.
29. K. Utani, S. Adachi, HF-treated (1 1 1), (1 1 0) and (1 0 0) Si surfaces studied by spectroscopic ellipsometry, Jpn. J. Appl. Phys. (1993) 3572-3576.
30. 4OH-treated Si(1 1 1) surfaces studied by spectroscopic ellipsometry and atomic force microscopy. Jpn. J. Appl. Phys. 35:1996;515-519.
31. R.M.A. Azzam, N.M. Bashara, Ellipsometry and Polarized Light, North-Holland, Amsterdam, 1977.
32. Aspnes D.E., Studna A.A. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV. Phys. Rev. B. 27:1983;985-1009.
33. 4OH-treated (1 1 1)Si surfaces studied by spectroscopic ellipsometry. J. Appl. Phys. 73:1993;3467-3471.
34. Kawabata Y., Adachi S. Studies of Si(1 1 1) surfaces treated in aqueous fluorine-based solutions. Appl. Surf. Sci. 152:1999;177-184.
35. G. Harbeke, in: F. Abelès (Ed.), Optical Properties of Solids, North-Holland, Amsterdam, 1972.
36. Erman M., Theeten J.B., Chambon P., Kelso S.M., Aspnes D.E. Optical properties and damage analysis of GaAs single crystals partly amorphized by ion implantation. J. Appl. Phys. 56:1984;2664-2671.
37. Sakaino K., Kawabata Y., Adachi S. Etching characteristics of Si(1 0 0) surfaces in an aqueous NaOH solution. J. Electrochem. Soc. 147:2000;1530-1534.