Roughening of single-crystal silicon surface etched by KOH water solution

Sensors and Actuators, A: Physical

Volumn 73, Issue 1-2, 1999, Pages 122-130

  Sato, Kazuo ^a   Shikida, Mitsuhiro ^a   Yamashiro, Takashi ^a   Tsunekawa, Masaki ^a   Ito, Shunji ^b  

^a NAGOYA UNIVERSITY   (Japan)

^b Aichi Prefectural Government   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL ORIENTATION; ETCHING; POTASSIUM COMPOUNDS; SINGLE CRYSTALS; SURFACE ROUGHNESS; TEXTURES; THERMAL EFFECTS;

ROUGHNESS DISTRIBUTION;

SILICON;

EID: 0033537516     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(98)00270-2     Document Type: Article

References (5)

1. A. Koide et al., Simulation of two-dimensional etch profile of silicon during orientation-dependent anisotropic etching, Proc. of IEEE Micro Electro Mechanical Systems (MEMS) Workshop, Nara, Japan, Feb. 1991, pp. 216-220.
2. Fühauf J., Hannemann B. Anisotropic multi-step etch processes of silicon. J. Micromech. Microeng. 7:1997;137-140.
3. K. Sato et al., Characterization of Anisotropic Etching Properties of Single Crystal Silicon: The Effects of KOH Concentration on the Etching Profiles, Proc. of IEEE MEMS97 (Nagoya, 1997, 1. 26-30) 406-411.
4. K. Asaumi et al., Anisotropic-Etching Process Simulation System MICROCAD Analyzing Complete 3D Etching Profiles of Single Crystal Silicon, Proc. of IEEE MEMS97 (Nagoya, 1997, 1. 26-30) 412-417.
5. Elwenspoek M. On the mechanism of anisotropic etching of silicon. J. Electrochem. Soc. 140(7):1993;2075-2080.