Characterisation of pyramid formation arising from the TMAH etching of silicon

Sensors and Actuators, A: Physical

Volumn 71, Issue 3, 1998, Pages 238-243

  Choi, W K ^a   Thong, J T L ^a   Luo, P ^a   Tan, C M ^a   Chua, T H ^a   Bai, Y ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Etching parameters; Pyramids; Silicon; Tetramethylammonium hydroxide (TMAH)

Indexed keywords

AMMONIUM COMPOUNDS; COMPOSITION EFFECTS; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; ETCHING; PH EFFECTS; RAPID THERMAL ANNEALING; SILICON WAFERS; THERMAL EFFECTS;

TETRAMETHYLAMMONIUM HYDROXIDE;

SILICON SENSORS;

EID: 0032306992     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(98)00193-9     Document Type: Article

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