High quality β-SiC films obtained by low-temperature heteroepitaxy combined with a fast carbonization step

Applied Physics A: Materials Science and Processing

Volumn 68, Issue 4, 1999, Pages 461-465

  Moller H ^a   Eickhoff, M ^a   Rapp, M ^a   Grueninger, H W ^a   Krotz G ^a  

^a DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARBONIZATION; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DEPOSITION; EPITAXIAL GROWTH; LOW TEMPERATURE OPERATIONS; MORPHOLOGY; ORGANIC COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS; THICKNESS MEASUREMENT; X RAY DIFFRACTION ANALYSIS;

CRYSTAL QUALITY; LOW TEMPERATURE HETEROEPITAXY; PHOTOTHERMAL DEFLECTION SPECTROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0037610762     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050924     Document Type: Article

References (11)

1. G.L. Harris, C.Y. Yang (Eds.): Amorphous and Crystalline Silicon Carbide (Springer, Berlin, Heidelberg 1989)
2. J. Strass, M. Eickhoff, G. Krötz: Transducers'97; 0-7803-3829-4/97/ 10.00 c, IEEE 1997
3. G. Krötz , Ch. Wagner, W. Legner, H. Sonntag, H. Möller, G. Müller: Inst. Phys. Conf. Ser. 142, Chap. 4, Kyoto, Japan 1996, pp. 829-832
4. German Patent Application AZ 19644830.1
5. G. Krötz, W. Legner, G. Muller, H.W. Grüninger, L. Smith, B. Leese, A. Jones, S. Rushworth: Mater. Sci. Eng. B 29, 154 (1995)
6. I. Golecki, F. Reidinger, J. Marti et al.: Appl. Phys. Lett. 60, 1703 (1992)
7. S. Nishino, J.A. Powell, H.A. Will: Appl. Phys. Lett. 42, 15 (1983)
8. Cree Research, Inc., 2810 Meridian Parkway, Durham, NC 27713
9. W.B. Jackson, N.M. Amer, A.C. Boccara, D. Fournier: Appl. Opt. 20, 1333 (1981)
10. Epichem Ltd, Power Road, Bromborough, Wirral, Merseyside L62 3QF, England, UK
11. H. Möller, G. Krötz, W. Legner, Ch. Wagner, G. Müller, L. Smith, B. Leese, A. Jones, S. Rushworth: Inst. Phys. Conf. Ser. 142, 1996, pp. 497-500