SOL thickness dependence of residual strain in SOI material

Electronics Letters

Volumn 35, Issue 15, 1999, Pages 1284-1286

  Camassel, J ^a   Planes, N ^a   Falkovsky, L ^a   Moller H ^b   Eickhoff, M ^b   Krotz G ^b  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; ION BEAMS; OXIDATION; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS; STRAIN;

RESIDUAL STRAIN; SILICON OVER LAYER;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0032641480     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990868     Document Type: Article

References (9)

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