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Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 445-448

Structural characterization of 3C-SiC epitaxially grown on Si-On-insulator

(5) Papaioannou, V a Pavlidou, E a Stoemenos, J a Reichert, W b Obermeier, E b

a ARISTOTLE UNIVERSITY OF THESSALONIKI (Greece)

b TECHNISCHE UNIVERSITÄT BERLIN (Germany)

Author keywords

Cavities; Epitaxial Growth of 3C SiC

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICA; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

STANDARD DEPOSITION TEMPERATURE;

SILICON CARBIDE;

EID: 0031675520 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.264-268.445 Document Type: Article

Times cited : (9)

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