메뉴 건너뛰기




Volumn 203, Issue 1, 1999, Pages 103-112

Gold films epitaxially grown by diffusion at the 3C-SiC/Si interface

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GOLD; GRAIN BOUNDARIES; HEAT TREATMENT; PHASE INTERFACES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; STACKING FAULTS;

EID: 0032689692     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00082-2     Document Type: Article
Times cited : (20)

References (15)
  • 10


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.