SCOPUS 정보 검색 플랫폼

1998 4th International High Temperature Electronics Conference, HITEC 1998

Volumn , Issue , 1998, Pages 114-121

High temperature (400°C) performance of ohmic contacts to n-type GaN and GaAs

(3) Chern, Jehn Huar a Sadwick, L P a Hwu, R J a

a Department of Electrical and Computer Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY ALLOYS; ELECTRIC CONTACTORS; GALLIUM ARSENIDE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; OHMIC CONTACTS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; WIDE BAND GAP SEMICONDUCTORS;

AIR AMBIENT; HIGH TEMPERATURE; N-TYPE GAN; THERMODYNAMICALLY STABLE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 84894140301 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/HITEC.1998.676771 Document Type: Conference Paper

Times cited : (6)

References (12)

1
- 33846780759
- M. O. Aboelfotoh, C. L. Lin, and J. M. Woodall, Appl. Phys. Lett., 65, pp. 3245, 1994.
- (1994) Appl. Phys. Lett. , vol.65 , pp. 3245
- Aboelfotoh, M.O.¹ Lin, C.L.² Woodall, J.M.³

2
- 5244298924
- S, Oktyabrsky, M. O. Aboelfotoh, and J. M. Woodall, J. of Electronic. Materials, vol. 25, No. 11 , pp. 1662, 1996.
- (1996) J. of Electronic. Materials , vol.25 , Issue.11 , pp. 1662
- Oktyabrsky, S.¹ Aboelfotoh, M.O.² Woodall, J.M.³

3
- 0000356689
- A. T. Ping, M. Asif Khan, and I. Adexida, J. of Electronic. Materials, vol. 25, No. 5, pp. 819, 1996.
- (1996) J. of Electronic. Materials , vol.25 , Issue.5 , pp. 819
- Ping, A.T.¹ Asif Khan, M.² Adexida, I.³

4
- 21544457842
- M. E. Lin, Z. Ma, F. Y. Huang, Z. F. Fari, L. H. Aalnlde and H. Morkoc, Appl. Phys. Lett., 64, pp. 1003, 1994.
- (1994) Appl. Phys. Lett. , vol.64 , pp. 1003
- Lin, M.E.¹ Ma, Z.² Huang, F.Y.³ Fari, Z.F.⁴ Aalnlde, L.H.⁵ Morkoc, H.⁶

5
- 21544457842
- M. E. Lin, Z. Ma, F. Y. Huang, Z. F. Fang, L. H. Alleann, d H. Morkoc, Appl. Phys. Lett. 64, 1003(1994).
- (1994) Appl. Phys. Lett. , vol.64 , pp. 1003
- Lin, M.E.¹ Ma, Z.² Huang, F.Y.³ Fang, Z.F.⁴ Alleann, L.H.⁵ Morkoc, H.⁶

6
- 85054589262
- Nagoya, J apari, Sept. 22-23
- Y. Wu, W. Jiaiig, B. Keller, S. Keller, D. Kapoliiek, S. DenBarrs and U. Mishra, Topical Workshop on III-V Nitrides, Nagoya, J apari, Sept. 22-23, 1995.
- (1995) Topical Workshop on III-V Nitrides
- Wu, Y.¹ Jiaiig, W.² Keller, B.³ Keller, S.⁴ Kapoliiek, D.⁵ DenBarrs, S.⁶ Mishra, U.⁷

7
- 0001031217
- Z. Fan, S. N. Mohammad, W. Kirn, O. Aktas, A. E. Botchkarev, K. Suzue, and H. Morkoc, J. of Electronics. Materials, vol. 25, No. 11, pp. 1703, 1996.
- (1996) J. of Electronics. Materials , vol.25 , Issue.11 , pp. 1703
- Fan, Z.¹ Mohammad, S.N.² Kirn, W.³ Aktas, O.⁴ Botchkarev, A.E.⁵ Suzue, K.⁶ Morkoc, H.⁷

8
- 0000441989
- S. E. Mohney and X. Lin, J. of Eiectronic. Materials, vol. 25, No. 5, pp. 811, 1996.
- (1996) J. of Eiectronic. Materials , vol.25 , Issue.5 , pp. 811
- Mohney, S.E.¹ Lin, X.²

9
- 85054595896
- B. P. Ludier, S. E. Moliney, t. N. Jackson, M. Asifk lian, Q. Chen, arid J. W. Yang, III-V Nitrides, MRS 1997, pp. 1097.
- (1997) III-V Nitrides, MRS , pp. 1097
- Ludier, B.P.¹ Moliney, S.E.² Jackson, T.N.³ Asifklian, M.⁴ Chen, Q.⁵ Yang, J.W.⁶

10
- 0003484135
- ed. J. L. Margrave, New York: Academic Press
- L. E. Toth, Transition Metal Carbides and Nitrides, ed. J. L. Margrave(New York:Academic Press, 1971).
- (1971) Transition Metal Carbides and Nitrides
- Toth, L.E.¹

11
- 0003612533
- New York: Plenum Press Data Division
- V. S. Fomenko and G. V. Samsonov, Handbook oftherionic Properties(New York:Plenum Press Data Division, 1966).
- (1966) Handbook of Therionic Properties
- Fomenko, V.S.¹ Samsonov, G.V.²

12
- 0842270697
- E. Haug, N. Hedgecock, and W. Buckel, Z. Phys., b22, 237, 1975.
- (1975) Z. Phys. , vol.B22 , pp. 237
- Haug, E.¹ Hedgecock, N.² Buckel, W.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.