Positron beam studies of defects in semiconductors

Materials Science Forum

Volumn 363-365, Issue , 2001, Pages 404-408

  Krause Rehberg, R ^a   Borner F ^a   Redmann, F ^a  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

Author keywords

Defect studies; Enhanced depth resolution; Positron beams; VEPAS

Indexed keywords

CALCULATIONS; DIFFUSION; ELECTRON TRAPS; ION IMPLANTATION; POINT DEFECTS; RAPID THERMAL ANNEALING; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SURFACES;

DEFECT PROFILING; DOPPLER BROADENING SPECTROSCOPY; POSITRON BEAMS; VACANCY CLUSTERS; VARIABLE ENERGY POSITRON ANNIHILATION SPECTROSCOPY;

POSITRON ANNIHILATION SPECTROSCOPY;

EID: 0035013879     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.363-365.404     Document Type: Conference Paper

References (29)

1. R. Krause-Rehberg and H.S. Leipner, Positron annihilation in semiconductors. Springer-Verlag, Berlin 1999.
2. P.J. Schultz and K.G. Lynn, Rev. Mod. Phys., 60 (1988), p. 701.
3. D. Schödlbauer, P. Sperr, G. Kögel and W. Triftshäuser, Nucl. Instrum. Meth. Phys. Res. B, 34 (1988), p. 258.
4. S. Mantl and W. Triftshäuser, Phys. Rev. B, 17 (1978), p. 1645.
5. K.G. Lynn, J.R. MacDonald, R.A. Boie, L.C. Feldman, J.D. Gabbe, M.F. Robbins, E. Bonderup and J. Golovchenko, Phys. Rev. Lett., 38 (1977), p. 241.
6. M. Alatalo, H. Kauppinen, K. Saarinen, M.J. Puska, J. Mäkinen, P. Hautojärvi and R.M. Nieminen, Phys. Rev. B, 51 (1995), p. 4176.
7. H. Greif, M. Haaks, U. Holzwarth, U. Männig, M. Tongbhoyai, T. Wider; K. Maier, J. Bihr, B. Huber Appl. Phys. Lett., 71 (1997), p. 2115.
8. G. Kögel, P. Sperr, K. Uhlmann, D.T. Britton, P. Willutzki, R. Steindl, W. Junker, A. Zecca, R.S. Brusa, M.P. Duarte-Naia, G.P. Karwasz, J. Paridaens, and A. Piazza, Appl. Surf. Sci., 116 (1997), p. 108.
9. W. Stoeffl, P. Asoka-Kumar and R. Howell, Appl. Surf. Sci., 149 (1999), p. 1.
10. G. Triftshäuser, G. Kögel, W. Triftshäuser, M. Springer, T. Hagner and K. Schreckenbach, Mater. Sci. Forum, 175 (1995), p. 221.
11. G. Brauer (Ed.), Conceptual report on a "European Positron Source for Applied Research - EPOS". 2000, http://www.ep3.uni-halle.de/positrons/EPOS/.
12. A.F. Makhov, Sov. Phys. Sol. State, 2 (1961), p. 1934.
13. R. Kögler, R.A. Yankov, M. Posselt, A.B. Danilin and W. Skorupa, Nucl. Instr. Meth. Phys. Res. B, 147 (1999), p. 96.
14. R.A. Brown, O. Kononchuk, G.A. Rozgonyi, S. Koveshnikov, A.P. Knights, PJ. Simpson and F. Gonzalez, J. Appl. Phys., 84 (1998), p. 2459.
15. S. Koveshnikov and O. Kononchuk, Appl. Phys. Lett., 73 (1998), p. 2340.
16. J. Xu, E.G. Roth, O.W. Holland, A.P. Mills, Jr. and R. Suzuki, Appl. Phys. Lett., 74 (1999), p. 997.
17. V.C. Venezia, D.J. Eaglesham, T.E. Haynes, A. Agarwal, D.C. Jacobson, H.J. Gossmann and F.H. Baumann, Appl. Phys. Lett., 73 (1998), p. 2980.
18. K.-H. Heinig and H.-U. Jäger, J. Appl. Phys., submitted.
19. S.V. Koveshnikov and G.A. Rozgonyi, J. Appl. Phys., 84 (1998), p. 3078.
20. A. Peeva, R. Kögler, P. Werner, A.A.D.d. Mattos, P.F.P. Fichtner, M. Behar and W. Skorupa, Nucl. Instr. Meth. Phys. Res., 161 (2000), p. 1090.
21. R. Kögler, A. Peeva, W. Anwand, G. Brauer, W. Skorupa, P. Werner and U. Gösele, Appl. Phys. Lett., 75 (1999), p. 1279.
22. R. Krause-Rehberg, F. Börner and F. Redmann, submitted to Appl. Phys. Lett.
23. F. Börner, R. Krause-Rehberg, F. Redmann, J. Gebauer, R. Kögler, W. Skorupa, P. Sperr and W. Triftshäuser, to be published.
24. F. Börner and R. Krause-Rehberg, Mater. Sci. Forum, this volume.
25. P.G. Coleman and A.P. Knights, Appl. Surf. Sci., 149 (1999), p. 82.
26. F. Börner, S. Eichler, A. Polity, R. Krause-Rehberg, R. Hammer and M. Jurisch, Appl. Surf. Sci., 149 (1999), p. 151.
27. N.B. Chilton and M. Fujinami, AIP Conf. Proc., 303 (1994), p. 25.
28. H. Kauppinen, C. Corbel, K. Skog, K. Saarinen, T. Laine, P. Hautojärvi, P. Desgardin and E. Ntsoenzok, Phys. Rev. B, 55 (1997), p. 9598.
29. P.J. Simpson, M. Spooner, H. Xia and A.P. Knights, J. Appl. Phys., 85 (1999), p. 1765.