Large-depth defect profiling in GaAs wafers after saw cutting

Applied Surface Science

Volumn 149, Issue 1, 1999, Pages 151-158

  Borner F ^a   Eichler, S ^a   Polity, A ^a   Krause Rehberg, R ^a   Hammer, R ^b   Jurisch, M ^b  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^b FREIBERGER COMPOUND MATERIALS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DOPPLER EFFECT; POSITRONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAWING; SCANNING ELECTRON MICROSCOPY; THERMODYNAMIC STABILITY;

DEFECT PROFILING; DOPPLER BROADENING SPECTROSCOPY; GALLIUM ARSENIDE WAFERS; ISOCHRONAL ANNEALING; POSITRON LIFETIME MEASUREMENT; VACANCY AGGREGATES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0343856564     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00192-0     Document Type: Article

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