Effect on GaN/Al0.17Ga0.83N and Al0.05Ga0.95N/Al0.17Ga0.83N quantum wells by isoelectronic in-doping during metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 2 B, 2000, Pages

  Kariya, Michihiko ^a   Nitta, Shugo ^a   Kosaki, Masayoshi ^a   Yukawa, Yohei ^a   Yamaguchi, Shigeo ^a   Amano, Hiroshi ^a   Akasaki, Isamu ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

TRIMETHYLALUMINUM; TRIMETHYLGALLIUM; TRIMETHYLINDIUM; X RAY ROCKING CURVE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033907368     PISSN: 00214922     EISSN: None     Source Type: None    
DOI: 10.1143/JJAP.39.L143     Document Type: Article

References (18)