A novel analysis technique for examining the effect of exposure conditions on the mask error enhancement factor

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4404, Issue , 2001, Pages 153-161

  Robertson, S A ^a   Reilly, M T ^a   Parker, C R ^a  

^a SHIPLEY COMPANY   (United States)

Author keywords

Bossung plot; Isofocal C.D.; MEEF; MEEFFEL plot

Indexed keywords

COMPUTER SIMULATION; CORRELATION METHODS; FINITE ELEMENT METHOD; LITHOGRAPHY; MATRIX ALGEBRA;

MASK ERROR ENHANCEMENT FACTOR (MEEF);

MASKS;

EID: 0034844621     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.425201     Document Type: Conference Paper

References (13)

1. MEEF in theory and practice
2. MEEF measurement and model verification for 0.3 k1 lithography
3. The mask error factor: Causes and implications for process latitude
4. Effects of bias on the mask error enhancement factor (MEEF) of contact holes
5. Manufacturing considerations for MEEF minimization and process window optimization for 180nm contact holes
6. The effects of mask error factor on process window capability
7. A new process monitor for reticles and wafers: The MEEF meter
8. Projection printing characterization
9. Understanding the impact of full field mask error factor
10. Impact of resist on the mask error enhancement factor
11. Effect of reticle bias on isofocal process performance at subhalfmicron resolution
12. Assessment of resist-specific isofocal behavior in optical lithography at half-micron resolution
13. Reducing the effects of aberrations with phase-shift masks and optimized resists