Effects of mask bias on the Mask Error Enhancement Factor (MEEF) of contact holes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4346, Issue 2, 2001, Pages 858-868

  Kang, Doris ^a   Robertson, Stewart ^a   Reilly, Michael ^a   Pavelchek, Edward ^a  

^a SHIPLEY COMPANY   (United States)

Author keywords

Contact holes; Masking bias; MEEF; Simulation

Indexed keywords

COHERENT LIGHT; COMPUTER SIMULATION; COMPUTER SOFTWARE; IMAGE ENHANCEMENT; MASKS;

MASK ERROR ENHANCEMENT FACTORS (MEEF);

PHOTORESISTS;

EID: 0035758843     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.435786     Document Type: Conference Paper

References (7)

1. th Annual BACUS Symposium on Photomask Technology and Management.
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3. G. Teng, G. Prokopowicz, D. Kang, C. Xu, J. Thackeray, T. Duong, G. Orsula, "Bias Printing of APSM Resists for 180 nm Contact Holes," Microelectronic Engineering, 2000, Vol. 53, pp. 457-460.
4. C.R. Parker and M.T. Reilly, "MEEF Measurement and Model Verification for 0.3 k1 Lithography," Proc. SPIE: Challenges in Process Integration and Device Technology, 2000, Vol. 4181, pp. 33-41.
5. C.A. Mack, "Analytic Approach to Understanding the Impact of Mask Errors on Optical Lithography", Proc. SPIE: Optical Microlithography XIII, 2000, Vol. 4000, pp. 215-227.
6. H. Ito, "Chemically Amplified Resists: Past, Present, and Future" Proc. SPIE: Advances in Resist Technology and Processing XVI, 1999, Vol. 3678, pp. 2-12.
7. D. Kang, S.A. Robertson, M.T. Reilly, E.K. Pavelchek, "Manufacturing Considerations for MEEF Minimization and Process Window Optimization for 180 nm Contact Holes," Submitted to Proc. SPIE: Lithography for Semiconductor Manufacturing, Edinburgh, 2001.