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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 9 A/B, 2000, Pages

Ellipsometric study of the optical properties of InGaAsN layers

(3) Li, Pei Wen a,c Guang, Huei Chen a Li, Nein Yi b

a I SHOU UNIVERSITY (Taiwan)

b Emcore Photovoltaics (United States)

c NATIONAL CENTRAL UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRY; ENERGY TRANSFER; NITROGEN; OPTICAL COMMUNICATION; OPTICAL RESOLVING POWER; PHOTOLUMINESCENCE; REFRACTIVE INDEX; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SPECTROSCOPIC ANALYSIS;

BANDGAP ENERGY; TRANSITION ENERGY;

SEMICONDUCTING FILMS;

EID: 0034268790 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.l898 Document Type: Article

Times cited : (7)

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