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Volumn E84-A, Issue 2, 2001, Pages 529-536

Statistical modeling of device characteristics with systematic variability

Author keywords

MOSFET; Stochastic; Systematic; Variability

Indexed keywords

CMOS INTEGRATED CIRCUITS; MATHEMATICAL MODELS; MOSFET DEVICES; NETWORK COMPONENTS; STATISTICAL METHODS;

EID: 0034824848     PISSN: 09168508     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (9)

References (11)
  • 7
    • 85027148720 scopus 로고    scopus 로고
    • 5-parameter transistor mismatch model, IEEE International Symposium on Circuits and Systems, vol.IV, pp.381-384, 28-31 May 2000.
    • T.S. Gotarredona and B.L. Barranco, A new strong inversion 5-parameter transistor mismatch model, IEEE International Symposium on Circuits and Systems, vol.IV, pp.381-384, 28-31 May 2000.
    • A New Strong Inversion
    • Gotarredona, T.S.1    Barranco, B.L.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.