Model-Adaptable MOSFET Parameter-Extraction Method Using an Intermediate Model

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 17, Issue 5, 1998, Pages 400-405

  Kondo, Masaki ^a,b   Onodera, Hidetoshi ^a,c   Tamaru, Keikichi ^a,b  

^a IEEE   (Japan)

^b KYOTO UNIVERSITY   (Japan)

^c TOSHIBA CORPORATION   (Japan)

Author keywords

Device modeling; Intermediate model; MOSFET; Numerical optimization; Parameter extraction

Indexed keywords

COMPUTER SIMULATION; MATHEMATICAL TRANSFORMATIONS; MOSFET DEVICES; OPTIMIZATION;

PARAMETER EXTRACTION METHOD; SOFTWARE PACKAGE SPICE;

SEMICONDUCTOR DEVICE MODELS;

EID: 0032066595     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/43.703924     Document Type: Article

References (10)

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