Advances in process overlay

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4344, Issue 1, 2001, Pages 114-126

  Hinnen, Paul C ^a   Megens, Henry J L ^a   Van Der Schaar, Maurits ^a   Van Haren, Richard J F ^a   Mos, Evert C ^a   Lalbahadoersing, Sanjay ^a   Bornebroek, Frank ^a   Laidler, David ^b  

^a ASML   (Netherlands)

^b IMEC   (Belgium)

Author keywords

300 mm; Alignment systems; Aluminum sputtering; CMP; Copper dual damascene; Overlay; Spin coating; STI

Indexed keywords

ALUMINUM; COPPER; DIELECTRIC MATERIALS; SILICON WAFERS; SPIN COATING; SPUTTERING; WSI CIRCUITS;

PROCESS OVERLAY;

INTEGRATED CIRCUIT LAYOUT;

EID: 0034762547     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.436734     Document Type: Article

References (12)

1. 0.7 NA DUV step & scan system for 150 nm imaging with improved overlay
2. Extended ATHENA alignment performance and application for the 100-nm technology node
3. Effect of processing on the overlay performance of a wafer stepper
4. Improved wafer stepper alignment performance using an enhanced phase grating alignment system
5. Overlay performance in advanced processes
6. Overlay performance on tungsten CMP layers using the ATHENA alignment system
7. Overlay budget considerations for an all scanner fab
8. Performance results of a new generation of 300-mm lithography systems
9. Monte Carlo simulations of sputter deposition and step coverage of thin films
10. Alignment issues in a copper dual inlaid process