Improved characteristic temperature (T0) of a 1.3-μ.m GaInNAs/GaAs single-quantum-well laser diode through thermal annealing

Materials Research Society Symposium - Proceedings

Volumn 597, Issue , 2000, Pages 33-38

  Kitatani, T ^a   Kondow, M ^a   Nakahara, K ^a   Uomi, K ^a   Tanaka, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; OPTICAL FIBERS; SEMICONDUCTING GALLIUM ARSENIDE;

LONG-WAVELENGTH LASER DIODES;

QUANTUM WELL LASERS;

EID: 0034547670     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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