High-quality InGaAsN growth by metalorganic vapor-phase epitaxy using nitrogen carrier gas and dimethylhydrazine, tertiarybutylarsine as group V precursors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1019-1021

  Ougazzaden, Abdallah ^a   Rao, Elchuri ^a   Sermage, Bernard ^a   Leprince, Laurent ^a   Gauneau, Marcel ^a  

^a ORANGE LABS   (France)

Author keywords

Dimethylhydrazine; GaAsN; InGaAsN; Photoluminescence

Indexed keywords

ARSENIC; HYDROGEN; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; NITROGEN; SEMICONDUCTING GALLIUM ARSENIDE;

AMBIENT GAS; DIMETHYLHYDRAZINE; NONRADIATIVE CARRIER LIFETIME; TERTIARYBUTYLARSINE;

SEMICONDUCTOR GROWTH;

EID: 0032632371     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1019     Document Type: Article

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