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Volumn 76, Issue 22, 2000, Pages 3298-3300

AlGaN-GaN-AllnGaN induced base transistor

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001079002     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126612     Document Type: Article
Times cited : (20)

References (16)
  • 8
    • 0041924253 scopus 로고    scopus 로고
    • Vertical transistors implemented with GaN-based materials: Prospects and progress
    • URSI, Toronto, Canada, August Abstract D4.2
    • P. M. Asbeck, E. T. Yu, S. S. Lau, and W. Sun, "Vertical Transistors Implemented with GaN-based Materials: Prospects and Progress," Abstracts, XXVIth General Assembly, URSI, Toronto, Canada, August 1999, Abstract D4.2, p. 241.
    • (1999) XXVIth General Assembly , pp. 241
    • Asbeck, P.M.1    Yu, E.T.2    Lau, S.S.3    Sun, W.4
  • 11
    • 0042925970 scopus 로고
    • edited by S. Flugge Springer, Berlin, Chap. 5
    • Encyclopedia of Physics, edited by S. Flugge (Springer, Berlin, 1956), Vol. XXI, Chap. 5, pp. 184-185.
    • (1956) Encyclopedia of Physics , vol.21 , pp. 184-185


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.