Surface processes in OMVPE - the frontiers

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 1-11

  Stringfellow, G B ^a   Shurtleff, J K ^a   Lee, R T ^a   Fetzer, C M ^a   Jun, S W ^a  

^a Department of Electrical and Computer Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER COMPOUNDS; DIMERS; ENERGY GAP; HETEROJUNCTIONS; PHASE TRANSITIONS; SURFACE ACTIVE AGENTS; THERMODYNAMIC STABILITY;

ISOELECTRONIC SURFACTANTS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0034507842     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00640-0     Document Type: Article

References (59)

1. Stringfellow G.B. Organometallic Vapor Phase Epitaxy. Theory and Practice 2nd Edition:1999;Academic Press, Boston.
2. C.T. Foxon, in: D.T.J. Hurle (Ed.), Handbook of Crystal Growth, Vol. 3, Elsevier Science, Amsterdam, 1994, p. 157.
3. Aspnes D.E.et al. J. Crystal Growth. 120:1992;71.
4. Kobayshi N., Kobayashi Y., Uwai K. J. Crystal Growth. 174:1997;544.
5. de Gennes P.G. Rev. Mod. Phys. 57:1985;841.
6. Markov I. Phys. Rev. B. 53:1996;4148.
7. Markov I. Phys. Rev. B. 50:1994;11271.
8. Copel M., Reuter M.C., Kaxiras E., Tromp R.M. Phys. Rev. Lett. 63:1989;632.
9. Tournie E., Ploog K.H. Thin Solid Films. 231:1993;43.
10. Reinking R., Kammier M., Horn-von Hoegen M., Hofmann K.R. Appl. Phys. Lett. 71:1997;924.
11. Massies J., Grandjean N., Etgens V.H. Appl. Phys. Lett. 61:1992;99.
12. Cunningham J.E., Goossen K.W., Jan W., Williams M.D. J. Vac. Sci. Technol. B. 13:1994;646.
13. LeGoues F.K., Kesan V.P., Iyer S.S., Tersoff J., Tromp R. Phys. Rev. Lett. 64:1990;2038.
14. Oigawa H., Wassermeier M., Behrend J., Daweritz L., Ploog K.H. Surf. Sci. 376:1997;185.
15. Kandel D., Kaxiras E. Phys. Rev. Lett. 75:1995;2742.
16. Oh C.W., Kim E., Lee Y.H. Phys. Rev. Lett. 76:1996;776.
17. Kaspi R., Evans K.R., Reynolds D.C., Brown J., Skowronski M. Mater. Res. Soc. Symp. Proc. 379:1995;79.
18. Kaspi R., Reynolds D.C., Evans K.R., Taylor E.N. Institute of Physics Conference Series No, 141:1995;75.
19. Shurtleff J.K., Lee R.T., Fetzer C.M., Stringfellow G.B. Appl. Phys. Lett. 75:1999;1914.
20. Stringfellow G.B., Lee R.T., Fetzer C.M., Shurtleff J.K., Hsu Yu, Lee S., Seong T.Y. J. Electron. Mater. 29:2000;134.
21. Lee S.H., Fetzer C.M., Stringfellow G.B. J. Appl. Phys. 84:1998;2618.
22. Lee S.H., Fetzer C.M., Stringfellow G.B. J. Appl. Phys. 85:1999;3590.
23. Lee S.H., Fetzer C.M., Stringfellow G.B. J. Appl. Phys. 195:1998;13.
24. T.P. Pearsall and G.B. Stringfellow (Eds.), Compositional Modulation and Ordering in Semiconductors, MRS Bulletin 22 #7, 1997.
25. Su L.C., Ho I.H., Kobayashi N., Stringfellow G.B. J. Crystal Growth. 145:1994;140.
26. Stringfellow G.B. Santos M., Liu W.K. Thin Films: Heteroepitaxial Systems. 1998;64-116 World Scientific Publishing, Singapore.
27. Bertness K.A., Kurtz S.R., Friedman D.J., Kibbler A.E., Kramer C., Olson J.M. Appl. Phys. Lett. 65:1994;989.
28. Takamoto T., Ikeda E., Kurita H., Ohmori M. Appl. Phys. Lett. 70:1997;381.
29. G.B. Stringfellow, in: G.B. Stringfellow and M. G. Craford (Eds.), High Brightness Light Emitting Diodes, Academic Press, Boston, 1997.
30. Ueno Y.et al. Jpn. J. Appl. Phys. 29:1990;L1666.
31. Itaya K., Ishikawa M., Hatakoshi G., Uematsu U. IEEE J. Quantum Electron. 27:1991;1496.
32. Schneider R.P., Jones E.D., Follstaedt D.M. Appl. Phys. Lett. 65:1994;587.
33. Hsu Y., Fetzer C.M., Shurtleff J.K., Stringfellow G.B., Choi C.J., Seong T.Y. J. Appl. Phys. 87:2000;7776.
34. Kurtz S.R., Dawson L.R., Biefeld R.M., Follstaedt D.M., Doyle B.L. Phys. Rev. B. 46:1992;1909.
35. Zhang S.B., Froyen S., Zunger A. Appl. Phys. Lett. 67:1995;3141.
36. Murata H., Ho I.H., Su L.C., Hosokawa Y., Stringfellow G.B. J. Appl. Phys. 79:1996;6895.
37. Stringfellow G.B., Lee R.T., Fetzer C.M., Shurtleff J.K., Hsu Yu, Jun S.W., Lee S., Seong T.Y. J. Electron. Mater. 29:2000;134.
38. Lee R.T., Shurtleff J.K., Fetzer C.M., Stringfellow G.B., Lee S., Seong T.Y. Appl. Phys. Lett. 87:2000;3730.
39. Jun S.W., Fetzer C.M., Lee R.T., Shurtleff J.K., Stringfellow G.B. Appl. Phys. Lett. 76:2000;2716.
40. Ernst P., Geng C., Scholz F., Schwezer H., Zhang Y., Mascarenhas A. Appl. Phys. Lett. 67:1994;2347.
41. Hsu T.C., Hsu Yu, Stringfellow G.B. J. Crystal Growth. 193:1998;1.
42. Harrison W.A. Electronic Structure and the Properties of Solids. Physics of the Chemical Bond Freeman:1980;New York.
43. Fetzer C.M., Lee R.T., Shurtleff J.K., Stringfellow G.B., Lee S.M., Seong T.Y. Appl. Phys. Lett. 76:2000;1440.
44. Gomyo A., Makita K., Hino I., Suzuki T. Phys. Rev. Lett. 72:1994;673.
45. Stringfellow G.B., Fetzer C.M., Lee R.T., Jun S.W., Shurtleff J.K. MRS Proceedings. 583:2000;201.
46. Fetzer C.M., Lee R.T., Shurtleff J.K., Stringfellow G.B. Appl. Phys. Lett. 76:2000;1440.
47. Okuda H., Kondo M., Kato K., Nakajima K. Appl. Phys. Lett. 56:1990;337.
48. Follstaedt D.M., Schneider R.P., Jones E.D. J. Appl. Phys. 77:1995;3077.
49. Chen A.C., Moy A.M., Chou L.J., Hsieh K.C., Cheng K.Y. Appl. Phys. Lett. 66:1995;2694.
50. Gonzalez D., Aragon G., Araujo D., de Castro M.J., Garcia R. Appl. Phys. Lett. 74:1999;2649.
51. Ichihashi T., Kurihara K., Nishi K., Suzuki T. Jpn. J. Appl. Phys. 39:2000;L126.
52. J. K. Shurtleff, R.T. Lee, G.B. Stringfellow, Proceedings of the International Symposium on Compound Semiconductors, 2000 (to be published).
53. Stringfellow G.B., Fetzer C.M., Lee R.T., Jun S.W., Shurtleff J.K. MRS Proceedings. 583:2000;201.
54. S.W. Jun, C.M. Fetzer, J.K. Shurtleff, G.B. Stringfellow, T.Y. Seong, unpublished results.
55. Jun S.W., Fetzer C.M., Lee R.T., Shurtleff J.K., Stringfellow G.B. Appl. Phys. Lett. 76:2000;2716.
56. S.W. Jun, C.M. Fetzer, R.T. Lee, J.K. Shurtleff, G.B. Stringfellow, S. Lee, C.J. Choi, T.Y. Seong, J. Appl. Phys. 88 (Volume 7) (2000).
57. Cao D.S., Reihlen E.H., Chen G.S., Kimball A.W., Stringfellow G.B. J. Crystal Growth. 109:1991;279.
58. Milind J.W., Gokhale R., Forrest S.R. J. Crystal Growth. 203:1999;302.
59. Allen G.C., Carmalt C.J., Cowley A.H., Hector A.L., Kamepalli S., Lawson Y.G., Norman N.C., Parkin I.P., Pickard L.I. Chem. Mater. 9:1997;1385.