Te doping of GaInP: Ordering and step structure

Journal of Applied Physics

Volumn 85, Issue 7, 1999, Pages 3590-3596

  Lee, S H ^a   Fetzer, C Y ^a   Stringfellow, G B ^a   Lee, D H ^b   Seong, T Y ^b  

^a University of Utah   (United States)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CONCENTRATION (PROCESS); COPPER COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING TELLURIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES; VAPOR PHASE EPITAXY;

SEMICONDUCTOR ALLOYS; TRANSMISSION ELECTRON DIFFRACTION (TED) PATTERNS;

HETEROJUNCTIONS;

EID: 0032620608     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369719     Document Type: Article

References (35)

1. G. B. Stringfellow, in Thin Films: Heteroepitaxial Systems, edited by M. Santos and W. K. Liu (World Scientific Publishing) (to be published).
2. G. B. Stringfellow, in Common Themes and Mechanisms of Epitaxial Growth, edited by P. Fuoss, J. Tsao, D. W. Kisker, A. Zangwill, and T. Kuech (Materials Research Society, Pittsburgh, 1993), pp. 35-46.
3. N. Kobayashi, Y. Kobayashi, and K. Uwai, J. Cryst. Growth 174, 544 (1997).
4. S. B. Zhang, S. Froyen, and A. Zunger, Appl. Phys. Lett. 67, 3141 (1995).
5. H. Murata, I. H. Ho, L. C. Su, Y. Hosokawa, and G. B. Stringfellow, J. Appl. Phys. 79, 6895 (1996).
6. L. C. Su, I. H. Ho, N. Kobayashi, G. B. Stringfellow, J. Cryst. Growth 145, 140 (1994).
7. R. P. Schneider, E. D. Jone, and D. M. Follstaedt, Appl. Phys. Lett. 65, 587 (1994).
8. H. Murata, I. H. Ho, Y. Hosokawa, and G. B. Stringfellow, Appl. Phys. Lett. 68, 2237 (1996).
9. A. Gomyo, Hitoshi Hotta, Isao Hino, S. Kawata, Kenichi Kobayashi, and Tohru Suzuki, Jpn. J. Appl. Phys., Part 2 28, L1330 (1989).
10. J. P. Goral, Sarah R. Kurtz, J. M. Olson, and A. Kibbler, J. Electron. Mater. 19, 95 (1990).
11. T. Suzuki, A. Gomyo, I. Hino, K. Kobayashi, S. Kawata, and S. Iijima, Jpn. J. Appl. Phys., Part 2 27, L1549 (1988).
12. F. P. Dabkowski, P. Gavrilovic, K. Meehan, W. Stutius, J. E. Williams, M. A. Shahid, and S. Mahajan, Appl. Phys. Lett. 52, 2142 (1988).
13. E. Monta, M. Ikeda, O. Kumagai, and K. Kaneko, Appl. Phys. Lett. 53, 2164 (1988).
14. M. K. Lee, R. H. Horng, and L. C. Haung, Appl. Phys. Lett. 59, 3261 (1991).
15. Sarah R. Kurtz, J. M. Olson, D. J. Friedman, A. E. Kibbler, and S. Asher, J. Electron. Mater. 23, 431 (1994).
16. S. H. Lee, T. C. Hsu, and G. B. Stringfellow, J. Appl. Phys. 84, 2618 (1998).
17. S. H. Lee, C. F. Fetzer, and G. B. Stringfellow, J. Cryst. Growth 195, 13 (1998).
18. P. Ernst, C. Geng, F. Scholz, H. Schwezer, Y. Zhang, and A. Mascarenhas, Appl. Phys. Lett. 67, 2347 (1994).
19. J. I. Pankove, Optical Processes in Semiconductors (Dover Publications, Inc., New York, 1971), pp. 134-137.
20. P. Ernst, Y. Zhang, F. A. J. M. Driessen, A. Mascarenhas, E. D. Jones, C. Geng, F. Scholz, and H. Schweizer, J. Appl. Phys. 81, 2814 (1997).
21. L. C. Su, I. H. Ho, and G. B. Stringfellow, J. Appl. Phys. 75, 5135 (1994).
22. A. Zangwill, J. Cryst. Growth 163, 8 (1996).
23. G. B. Stringfellow and L. C. Su, J. Cryst. Growth 163, 128 (1996).
24. Y. S. Chun, H. Murata, T. C. Hsu, I. H. Ho, L. C. Su, Y. Hosokawa, and G. B. Stringfellow, J. Appl. Phys. 79, 6900 (1996).
25. S. H. Lee and G. B. Stringfellow, J. Appl. Phys. 83, 3620 (1998).
26. S. H. Lee, Yu Hsu, and G. B. Stringfellow, J. Electron. Mater. 26, 1244 (1997).
27. M. D. Pashley, Phys. Rev. B 40, 10481 (1989).
28. S. A. Chalmers, J. Y. Tsao, and A. C. Gossard, Appl. Phys. Lett. 61, 645 (1992).
29. C. Orme, M. D. Johnson, K. T. Leung, B. G. Orr, P. Smilauer, and D. Vvedensky, J. Cryst. Growth 150, 128 (1995).
30. A. Ferraz and R. C. de Silva, Surf. Sci. 352-354, 379 (1996).
31. Y. Tokura, H. Saito, and T. Fukui, J. Cryst. Growth 94, 46 (1989); G. Ehrlich and F. G. Hudda, J. Chem. Phys. 44, 1039 (1966); R. L. Schwoebel, J. Appl. Phys. 40, 614 (1969).
32. Y. Tokura, H. Saito, and T. Fukui, J. Cryst. Growth 94, 46 (1989); G. Ehrlich and F. G. Hudda, J. Chem. Phys. 44, 1039 (1966); R. L. Schwoebel, J. Appl. Phys. 40, 614 (1969).
33. Y. Tokura, H. Saito, and T. Fukui, J. Cryst. Growth 94, 46 (1989); G. Ehrlich and F. G. Hudda, J. Chem. Phys. 44, 1039 (1966); R. L. Schwoebel, J. Appl. Phys. 40, 614 (1969). R. L. Schwoebel, J. Appl. Phys. 40, 614 (1969).
34. M. Hata, T. Isu, A. Watanabe, Y. Kajikawa, and Y. Katayama, J. Cryst. Growth 114, 203 (1991);
35. Y. Tokura, H. Saito, and T. Fukui, J. Cryst. Growth 94, 46 (1989); G. Ehrlich and F. G. Hudda, J. Chem. Phys. 44, 1039 (1966); R. L. Schwoebel, J. Appl. Phys. 40, 614 (1969). T. Isu, M. Hata, Y. Morishita, Y. Nomura, and Y. Katayama, ibid. 115, 423 (1991). T. Isu, M. Hata, Y. Morishita, Y. Nomura, and Y. Katayama, ibid. 115, 423 (1991).