Effect of Te doping on step structure and ordering in GaInP

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 13-20

  Lee, S H ^a   Fetzer, C ^a   Stringfellow, G B ^a  

^a University of Utah   (United States)

Author keywords

GaInP; Ordering; Step structure; Te doping

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; COPPER COMPOUNDS; CRYSTAL STRUCTURE; ENERGY GAP; MORPHOLOGY; REACTION KINETICS; SEMICONDUCTING TELLURIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMODYNAMICS;

GALLIUM INDIUM PHOSPHIDE; STEP STRUCTURES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032476973     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00558-2     Document Type: Article

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