Reconstruction of the GaAs(001) surface induced by submonolayer be deposition

Surface Science

Volumn 376, Issue 1-3, 1997, Pages 185-191

  Oigawa, H ^a   Wassermeier, M ^a   Behrend, J ^a   Daweritz L ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Beryllium; Gallium arsenide; Molecular beam epitaxy; Reflection high energy electron diffraction; Scanning tunneling microscopy; Submonolayer deposition; Surface reconstruction

Indexed keywords

BERYLLIUM; CARRIER CONCENTRATION; DEPOSITION; MOLECULAR BEAM EPITAXY; MONOLAYERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DOPING; SURFACE STRUCTURE; SURFACE TREATMENT;

SURFACE RECONSTRUCTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031122594     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)01310-1     Document Type: Article

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