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Journal of Crystal Growth

Volumn 193, Issue 1-2, 1998, Pages 1-8

Effect of P precursor on surface structure and ordering in GaInP

(3) Hsu, T C a Hsu, Yu a Stringfellow, G B a

a UNIVERSITY OF UTAH (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; PARTIAL PRESSURE; PHOSPHORUS COMPOUNDS; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE STRUCTURE;

ORDERING PROCESS; ORGANOMETALLIC VAPOR PHASE EPITAXIAL GROWTH; PHOSPHINE; REFLECTIVITY TRANSIENT; SURFACE PHOTO ABSORPTION; TERTIARYBUTYLPHOSPHINE;

SEMICONDUCTOR GROWTH;

EID: 0032475274 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00398-4 Document Type: Article

Times cited : (12)

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